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vishay siliconix SIZ918DT new product document number: 63783 s12-0543 rev. a, 12-mar-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com dual n-channel 30 v (d-s) mosfets features ? trenchfet ? power mosfets ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? notebook system power ? pol ? synchronous buck converter notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 65 c/w for channel-1 and 55 c/w for channel-2. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) q g (typ.) channel-1 30 0.0120 at v gs = 10 v 16 a 6.8 nc 0.0145 at v gs = 4.5 v 16 a channel-2 30 0.0037 at v gs = 10 v 28 a 32 nc 0.0045 at v gs = 4.5 v 28 a s 2 g 2 g 1 d 1 d 1 6 7 8 3 2 1 d 1 s 1 /d 2 5 mm 6 mm d 1 4 5 pin 1 orderin g information: siz91 8 dt-t1-ge3 (lead (p b )-free and halogen-free) powerpair ? 6 x 5 pin 9 d 1 s 2 n-channel 2 mosfet n-channel 1 mosfet g 1 s 1 /d 2 g 2 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 16 a 28 a a t c = 70 c 16 a 28 a t a = 25 c 14.3 b, c 26 a, b, c t a = 70 c 11.4 b, c 21 a, b, c pulsed drain current (t = 300 s) i dm 50 110 continuous source drain diode current t c = 25 c i s 16 a 28 a t a = 25 c 3.4 b, c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 18 35 single pulse avalanche energy e as 16 61 mj maximum power dissipation t c = 25 c p d 29 100 w t c = 70 c 18 64 t a = 25 c 4.2 b, c 5.2 b, c t a = 70 c 2.7 b, c 3.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t ? 10 s r thja 24 30 19 24 c/w maximum junction-to-case (drain) steady state r thjc 3.4 4.3 1 1.25
www.vishay.com 2 document number: 63783 s12-0543 rev. a, 12-mar-12 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 v v gs = 0 v, i d = 250 a ch-2 30 v ds temperature coefficient ? v ds /t j i d = 250 a ch-1 33 mv/c i d = 250 a ch-2 37 v gs(th) temperature coefficient ? v gs(th) /t j i d = 250 a ch-1 - 5 i d = 250 a ch-2 - 7.5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 2.2 v v ds = v gs , i d = 250 a ch-2 1.2 2.2 gate source leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a v ds = 30 v, v gs = 0 v ch-2 1 v ds = 30 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 30 v, v gs = 0 v, t j = 55 c ch-2 5 on-state drain current b i d(on) v ds ?? 5 v, v gs = 10 v ch-1 20 a v ds ?? 5 v, v gs = 10 v ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 13.8 a ch-1 0.0100 0.0120 ? v gs = 10 v, i d = 20 a ch-2 0.0030 0.0037 v gs = 4.5 v, i d = 12.6 a ch-1 0.0120 0.0145 v gs = 4.5 v, i d = 20 a ch-2 0.0035 0.0045 forward transconductance b g fs v ds = 10 v, i d = 13.8 a ch-1 47 s v ds = 10 v, i d = 20 a ch-2 116 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 790 pf ch-2 3830 output capacitance c oss ch-1 190 ch-2 670 reverse transfer capacitance c rss ch-1 76 ch-2 315 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 13.8 a ch-1 14 21 nc v ds = 15 v, v gs = 10 v, i d = 20 a ch-2 67.3 105 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 13.8 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 20 a ch-1 6.8 11 ch-2 32 48 gate-source charge q gs ch-1 2.6 ch-2 10.8 gate-drain charge q gd ch-1 1.9 ch-2 9.3 gate resistance r g f = 1 mhz ch-1 0.4 2 4 ? ch-2 0.2 1.1 2.2
document number: 63783 s12-0543 rev. a, 12-mar-12 www.vishay.com 3 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? ch-1 15 30 ns ch-2 30 60 rise time t r ch-1 12 20 ch-2 33 65 turn-off delay time t d(off) ch-1 20 40 ch-2 40 80 fall time t f ch-1 10 20 ch-2 12 25 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? ch-1 10 20 ch-2 15 30 rise time t r ch-1 12 20 ch-2 22 25 turn-off delay time t d(off) ch-1 20 40 ch-2 40 80 fall time t f ch-1 10 20 ch-2 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 16 a ch-2 28 pulse diode forward current a i sm ch-1 50 ch-2 110 body diode voltage v sd i s = 10 a, v gs = 0 v ch-1 0.85 1.2 v i s = 10 a, v gs = 0 v ch-2 0.8 1.2 body diode reverse recovery time t rr channel-1 i f = 10 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 20 40 ns ch-2 30 60 body diode reverse recovery charge q rr ch-1 10 20 nc ch-2 21 40 reverse recovery fall time t a ch-1 11 ns ch-2 17 reverse recovery rise time t b ch-1 9 ch-2 13
www.vishay.com 4 document number: 63783 s12-0543 rev. a, 12-mar-12 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10 v thr u 4 v v gs =3 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.006 0.00 8 0.010 0.012 0.014 0 102030405060 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 3 6 9 12 15 v ds =24 v v ds =15 v i d = 13. 8 a v ds =7.5 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 200 400 600 8 00 1000 1200 0 5 10 15 20 25 30 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 - 50 -- 25 0 25 50 75 100 125 150 i d =13. 8 a v gs =10 v ;4.5 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 63783 s12-0543 rev. a, 12-mar-12 www.vishay.com 5 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1. 8 1.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0246 8 10 i d =13. 8 a t j =25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 s 100 ms limited by r ds(on) * 1 ms t a = 25 c bvdss limited 10 ms 1 s dc
www.vishay.com 6 document number: 63783 s12-0543 rev. a, 12-mar-12 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 10 20 30 40 50 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 5 10 15 20 25 30 25 50 75 100 125 150 power (w) t c - case temperature ( c)
document number: 63783 s12-0543 rev. a, 12-mar-12 www.vishay.com 7 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =65 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
www.vishay.com 8 document number: 63783 s12-0543 rev. a, 12-mar-12 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 0 20 40 60 80 100 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 20 40 60 80 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 15 v v ds = 7.5 v i d = 20 a transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v i d = 20 a v gs = 10 v
document number: 63783 s12-0543 rev. a, 12-mar-12 www.vishay.com 9 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j - temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power 0.000 0.002 0.004 0.006 0.008 0.010 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 ms limited by r ds(on) * 1 ms t a = 25 c bvdss limited 10 ms 1 s dc
www.vishay.com 10 document number: 63783 s12-0543 rev. a, 12-mar-12 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 20 40 60 80 100 25 50 75 100 125 150 power (w) t c - case temperature ( c)
document number: 63783 s12-0543 rev. a, 12-mar-12 www.vishay.com 11 vishay siliconix SIZ918DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63783 . normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 55 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
package information www.vishay.com vishay siliconix revision: 22-dec-14 1 document number: 63656 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpair ? 6 x 5 case outline millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0.00 - 0.10 0.000 - 0.004 a3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 bsc 0.010 bsc d 4.90 5.00 5.10 0.192 0.196 0.200 d1 3.75 3.80 3.85 0.148 0.150 0.152 e 5.90 6.00 6.10 0.232 0.236 0.240 e1 option aa (for w/b) 2.62 2.67 2.72 0.103 0.105 0.107 e1 option ab (for bwl) 2.42 2.47 2.52 0.095 0.097 0.099 e2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 bsc 0.050 bsc k option aa (for w/b) 0.45 typ. 0.018 typ. k option ab (for bwl) 0.65 typ. 0.025 typ. k1 0.66 typ. 0.025 typ. l 0.33 0.43 0.53 0.013 0.017 0.020 l3 0.23 bsc 0.009 bsc z 0.34 bsc 0.013 bsc ecn: t14-0782-rev. c, 22-dec-14 dwg: 6005 a1 b1 f f e pin 1 pin 2 pin 3 pin 4 pin 8 pin 7 pin 6 pin 5 a e2 e e1 k z l d1 b k1 back s ide view 0.10 c d1 d a 0.08 c pin # 1 ident (optional) 0.10 c 2x c a3 l3 top s ide view 0.10 c 2x pin 8 pin 7 pin 6 pin 5 pin 1 pin 2 pin 3 pin 4
pad pattern www.vishay.com vishay siliconix revision: 16-feb-15 1 document number: 67480 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpair ? 6 x 5 note ? linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. 2.835 (0.112) 2.12 (0.083) 0.55 (0.022) 1.21 (0.048) 2.13 (0.084) 2.835 (0.112) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) 1.905 (0.075) 0.53 (0.021) 0.44 (0.017) 0.92 (0.036) 0.66 (0.026) 0.45 (0.018) 0.53 (0.021) 2.67 (0.105) 0.28 (0.011) dimen s ion s in millimeter s (inch) pin 1 (0, 0) 4 (0.157) 4 (0.157)
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